用Ga-Sn-O薄膜制备两层ReRAM

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI:10.23919/AM-FPD.2019.8830625

Ayata Kurasaki, Sumio Sugiski, R. Tanaka, T. Matsuda, M. Kimura

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摘要

本文研究了采用Ga-Sn-O (GTO)薄膜的电阻式随机存取存储器(ReRAM)。本研究制作的器件具有夹层结构，在电极之间夹有两层不同电阻值的GTO薄膜。从所制备器件的电流-电压特性来看，即使重复写入和擦除400次，也可以确认其作为存储器的功能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of two-layered ReRAM using Ga-Sn-O thin film

We have studied Resistive Random Access Memory (ReRAM) using Ga-Sn-O (GTO) thin film. The device fabricated in this study has a sandwich structure in which two layers of GTO thin films with different resistance values are sandwiched between electrodes. From the current-voltage characteristics of the fabricated device, it was possible to confirm the function as memory even if writing and erasing are repeated 400 times.

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来源期刊

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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