{"title":"高介电衬底微带谐振器的q因子","authors":"A. Zakharov, M. Ilchenko, V. Karnauh, L. Pinchuk","doi":"10.1109/CRMICO.2010.5632662","DOIUrl":null,"url":null,"abstract":"The experimental researches of microstrip resonators on the substrates with inductivity ε<sub>r</sub> = 80; 38 have been carried out (thickness of the substrate is 1 mm).","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Q-factor of microstrip resonators with high dielectric substrates\",\"authors\":\"A. Zakharov, M. Ilchenko, V. Karnauh, L. Pinchuk\",\"doi\":\"10.1109/CRMICO.2010.5632662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The experimental researches of microstrip resonators on the substrates with inductivity ε<sub>r</sub> = 80; 38 have been carried out (thickness of the substrate is 1 mm).\",\"PeriodicalId\":237662,\"journal\":{\"name\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2010.5632662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2010.5632662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Q-factor of microstrip resonators with high dielectric substrates
The experimental researches of microstrip resonators on the substrates with inductivity εr = 80; 38 have been carried out (thickness of the substrate is 1 mm).