先进SOI器件中的维度效应和其他新效应

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635209

Sorin Cristoloveanu

{"title":"先进SOI器件中的维度效应和其他新效应","authors":"Sorin Cristoloveanu","doi":"10.1109/EDSSC.2005.1635209","DOIUrl":null,"url":null,"abstract":"Institut de Microelectronics, Electromagnetism and Photonics (UMR CNRS, INPG & UJF), ENSERG, B.P. 257, 38016 Grenoble Cedex 1, France. E-mail: sorin@enserg.fr Abstract-The principles of SOI technology for ultimate scaling are reviewed. Several interesting mechanisms result from the reduction in the transistor volume or from the implementation of several gates. The discussion is based on recent measurements in advanced SOI MOSFETs.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dimensional and Other New Effects in Advanced SOI Devices\",\"authors\":\"Sorin Cristoloveanu\",\"doi\":\"10.1109/EDSSC.2005.1635209\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Institut de Microelectronics, Electromagnetism and Photonics (UMR CNRS, INPG & UJF), ENSERG, B.P. 257, 38016 Grenoble Cedex 1, France. E-mail: sorin@enserg.fr Abstract-The principles of SOI technology for ultimate scaling are reviewed. Several interesting mechanisms result from the reduction in the transistor volume or from the implementation of several gates. The discussion is based on recent measurements in advanced SOI MOSFETs.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635209\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635209","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

微电子学，电磁学和光子学研究所(UMR CNRS, INPG & UJF)， ENSERG, B.P. 257,38016法国格勒诺布尔Cedex 1。摘要综述了SOI技术的基本原理。由于晶体管体积的减小或几个栅极的实现，产生了几个有趣的机制。讨论是基于先进的SOI mosfet的最新测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dimensional and Other New Effects in Advanced SOI Devices

Institut de Microelectronics, Electromagnetism and Photonics (UMR CNRS, INPG & UJF), ENSERG, B.P. 257, 38016 Grenoble Cedex 1, France. E-mail: sorin@enserg.fr Abstract-The principles of SOI technology for ultimate scaling are reviewed. Several interesting mechanisms result from the reduction in the transistor volume or from the implementation of several gates. The discussion is based on recent measurements in advanced SOI MOSFETs.

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来源期刊

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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