半导体纳米线激光器的进展

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI:10.1109/PHOSST.2016.7548547

G. Koblmuller, B. Mayer, T. Stettner, B. Loitsch, M. Kaniber, G. Abstreiter, J. Finley

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引用次数: 0

摘要

我们介绍了硅上单片集成gaas纳米线激光器的最新进展，并进一步展示了利用低维系统调节阈值功率密度和激光波长的外延增益控制。最后，我们还展示了未来锁相激光器的超快发射和独特的相位相干特性的方案。

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Advances in semiconductor nanowire lasers

We present recent advances on monolithically integrated GaAs-nanowire lasers on silicon, and further demonstrate epitaxial gain control to tune threshold power density and lasing wavelength using low-dimensional systems. Ultimately, we also show schemes for ultrafast emission and unique phase coherence properties for future phase-locked lasers.

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2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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