esd诱导的内部核心器件失效:片上系统(SOC)设计中的新失效模式

Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05) Pub Date : 2005-07-20 DOI:10.1109/IWSOC.2005.58

Y. Huh, P. Bendix, Kyungjin Min, Jau-Wen Chen, R. Narayan, L. Johnson, S. Voldman

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引用次数: 6

摘要

随着MOSFET的缩放、设计复杂性的增加和多个系统功率域，ESD故障发生在没有连接到外部封装引脚的内部核心区域。介绍了各种内部核心装置故障机制和设计建议。

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ESD-induced internal core device failure: new failure modes in system-on-chip (SOC) designs

With MOSFET scaling, increased design complexity, and multiple system power domains, ESD failures occur in internal core areas which are not connected to external package pins. A review of the various internal core device failure mechanisms and design recommendations are presented.

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来源期刊

Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)

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