200GHz信道带宽WDM-PON中注入锁定反射SOA上游发射机的偏置和温度效应

2008 International Conference on Photonics in Switching Pub Date : 2008-08-01 DOI:10.1109/PS.2008.4804230

Yi-Hung Lin, Tzu-Kang Cheng, Yu-Chieh Chi, Gong-Cheng Lin, Gong-Ru Lin

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引用次数: 0

摘要

研究了在信道间隔为200ghz的DWDM-PON系统中，直接调制速率为622 Mbit/sec和1.25 Gbit/sec的放大自发发射注入锁定反射半导体光放大器发射机对偏置电流和温度的依赖关系。

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Bias and temperature effect of an injection locked reflective SOA upstream transmitter in WDM-PON with 200GHz channel bandwidth

Biased current and temperature dependence of amplified spontaneous emission injection-locked reflective semiconductor optical amplifier based transmitter directly modulated at 622 Mbit/sec and 1.25 Gbit/sec in DWDM-PON system with channel spacing of 200 GHz are characterized.

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2008 International Conference on Photonics in Switching

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