GaAs mesfet的宽带电磁辐射损伤

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.186036

J. McAdoo, W. M. Bollen, W. Catoe, R. Kaul

{"title":"GaAs mesfet的宽带电磁辐射损伤","authors":"J. McAdoo, W. M. Bollen, W. Catoe, R. Kaul","doi":"10.1109/MCS.1992.186036","DOIUrl":null,"url":null,"abstract":"A failure mechanism was observed for SiN/sub 2/-passivated metal-semiconductor field-effect-transistor (MESFET) devices exposed to fast-risetime DC video pulses. The intensity of the pulses was about 33% of the value required to cause single-pulse failure. The failure mechanism, which degrades performance by surface flashover and erosion of the passivation layer, eventually leads to sputtering of the gate-source metallization. The results were observed by using a combination of optical, electron, and X-ray micrographs, plus MESFET terminal parameters.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"54 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Broad-band electromagnetic radiation damage in GaAs MESFETs\",\"authors\":\"J. McAdoo, W. M. Bollen, W. Catoe, R. Kaul\",\"doi\":\"10.1109/MCS.1992.186036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A failure mechanism was observed for SiN/sub 2/-passivated metal-semiconductor field-effect-transistor (MESFET) devices exposed to fast-risetime DC video pulses. The intensity of the pulses was about 33% of the value required to cause single-pulse failure. The failure mechanism, which degrades performance by surface flashover and erosion of the passivation layer, eventually leads to sputtering of the gate-source metallization. The results were observed by using a combination of optical, electron, and X-ray micrographs, plus MESFET terminal parameters.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"54 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.186036\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

研究了SiN/sub 2/钝化金属半导体场效应晶体管(MESFET)器件在快速上升时间直流视频脉冲下的失效机制。脉冲强度约为引起单脉冲失效所需值的33%。失效机制是由于表面闪络和钝化层的侵蚀导致性能下降，最终导致栅源金属化溅射。结果是通过使用光学、电子和x射线显微照片以及MESFET终端参数的组合来观察的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Broad-band electromagnetic radiation damage in GaAs MESFETs

A failure mechanism was observed for SiN/sub 2/-passivated metal-semiconductor field-effect-transistor (MESFET) devices exposed to fast-risetime DC video pulses. The intensity of the pulses was about 33% of the value required to cause single-pulse failure. The failure mechanism, which degrades performance by surface flashover and erosion of the passivation layer, eventually leads to sputtering of the gate-source metallization. The results were observed by using a combination of optical, electron, and X-ray micrographs, plus MESFET terminal parameters.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

自引率

0.00%

发文量