H. Shah, Y. Xiao, T. P. Chow, R. Gutmann, E. R. Olson, S. Park, W. Lee, J. Connors, T. Jahns, R. Lorenz
{"title":"电力电子模块的逆变器应用使用倒装芯片上的柔性电路技术","authors":"H. Shah, Y. Xiao, T. P. Chow, R. Gutmann, E. R. Olson, S. Park, W. Lee, J. Connors, T. Jahns, R. Lorenz","doi":"10.1109/IAS.2004.1348673","DOIUrl":null,"url":null,"abstract":"A power packaging platform that features flex-circuit interconnection of power dies and flip-chip soldering technology has incorporated several advanced features including active gate drive technology with adjustable dv/dt control, a self-boost charge pump for the high-side gate drive power supply, and isolated giant magnetoresistive (GMR) devices for current sensing and active Tj and /spl Delta/Tj. control. The packaging platform, previously demonstrated suitably for 42 V/16 A automotive applications, has been extended to 400 V/10 A inverter applications. Experimental test results demonstrate electrical performance measured under both double-pulse and 10% duty-ratio conditions. A comparison of the switching characteristics of IGBT test modules implemented with both Si and SiC free-wheeling diodes demonstrates the performance advantages that are possible with SiC power devices.","PeriodicalId":131410,"journal":{"name":"Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Power electronics modules for inverter applications using flip-chip on flex-circuit technology\",\"authors\":\"H. Shah, Y. Xiao, T. P. Chow, R. Gutmann, E. R. Olson, S. Park, W. Lee, J. Connors, T. Jahns, R. Lorenz\",\"doi\":\"10.1109/IAS.2004.1348673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A power packaging platform that features flex-circuit interconnection of power dies and flip-chip soldering technology has incorporated several advanced features including active gate drive technology with adjustable dv/dt control, a self-boost charge pump for the high-side gate drive power supply, and isolated giant magnetoresistive (GMR) devices for current sensing and active Tj and /spl Delta/Tj. control. The packaging platform, previously demonstrated suitably for 42 V/16 A automotive applications, has been extended to 400 V/10 A inverter applications. Experimental test results demonstrate electrical performance measured under both double-pulse and 10% duty-ratio conditions. A comparison of the switching characteristics of IGBT test modules implemented with both Si and SiC free-wheeling diodes demonstrates the performance advantages that are possible with SiC power devices.\",\"PeriodicalId\":131410,\"journal\":{\"name\":\"Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.2004.1348673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.2004.1348673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power electronics modules for inverter applications using flip-chip on flex-circuit technology
A power packaging platform that features flex-circuit interconnection of power dies and flip-chip soldering technology has incorporated several advanced features including active gate drive technology with adjustable dv/dt control, a self-boost charge pump for the high-side gate drive power supply, and isolated giant magnetoresistive (GMR) devices for current sensing and active Tj and /spl Delta/Tj. control. The packaging platform, previously demonstrated suitably for 42 V/16 A automotive applications, has been extended to 400 V/10 A inverter applications. Experimental test results demonstrate electrical performance measured under both double-pulse and 10% duty-ratio conditions. A comparison of the switching characteristics of IGBT test modules implemented with both Si and SiC free-wheeling diodes demonstrates the performance advantages that are possible with SiC power devices.