基于Si平台的60 ghz带宽o波段膜InGaAlAs电吸收调制器

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9674001

T. Aihara, T. Hiraki, Y. Maeda, T. Fujii, T. Tsuchizawa, K. Takahata, T. Kakitsuka, S. Matsuo

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引用次数: 2

摘要

我们在硅光子学平台上演示了60 ghz带宽的o波段电吸收调制器(EAM)。EAM由一个具有横向p-i-n结的InGaAlAs多量子阱组成，采用非均质集成技术制备。演示了100gbit /s不归零信号的清晰打开。

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60-GHz-bandwidth O-band Membrane InGaAlAs Electro-Absorption Modulator on Si Platform

We demonstrate a 60-GHz-bandwidth O-band electro-absorption modulator (EAM) on a Si photonics platform. The EAM consists of an InGaAlAs multiple quantum well with a lateral p-i-n junction, and is fabricated by heterogeneous integration technique. Clear eye opening for 100-Gbit/s non-return-to-zero signal is demonstrated.

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2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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