Santos Mayo, J. Lowney, Peter Roitman, Donald B. Novotny
{"title":"SIMOX薄膜的持续光导电性","authors":"Santos Mayo, J. Lowney, Peter Roitman, Donald B. Novotny","doi":"10.1109/SOSSOI.1990.145759","DOIUrl":null,"url":null,"abstract":"Photoinduced transient spectroscopy (PITS) was used to measure the persistent photoconductive (PPC) response in film resistors fabricated on two different commercial n-type SIMOX (separation by implantation of oxygen) wafers. A broadband, single-shot, flashlamp-pumped dye-laser pulse was used to photoexcite interband electrons in the film, and the decay of the induced excess carrier population was measured at temperatures in the 60-220 K range. The post-illumination conductivity transients observed show PPC signals exhibiting a nonexponential character. They were recorded for periods of time up to 30 s at constant temperature. Presented are the excess conductivity in SIMOX film annealed in nitrogen at 1300 degrees C for 6 h and the hole-trap volume density at the conductive-film-buried-silicon interface.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"10 27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Persistent photoconductivity in SIMOX films\",\"authors\":\"Santos Mayo, J. Lowney, Peter Roitman, Donald B. Novotny\",\"doi\":\"10.1109/SOSSOI.1990.145759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photoinduced transient spectroscopy (PITS) was used to measure the persistent photoconductive (PPC) response in film resistors fabricated on two different commercial n-type SIMOX (separation by implantation of oxygen) wafers. A broadband, single-shot, flashlamp-pumped dye-laser pulse was used to photoexcite interband electrons in the film, and the decay of the induced excess carrier population was measured at temperatures in the 60-220 K range. The post-illumination conductivity transients observed show PPC signals exhibiting a nonexponential character. They were recorded for periods of time up to 30 s at constant temperature. Presented are the excess conductivity in SIMOX film annealed in nitrogen at 1300 degrees C for 6 h and the hole-trap volume density at the conductive-film-buried-silicon interface.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"10 27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145759\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoinduced transient spectroscopy (PITS) was used to measure the persistent photoconductive (PPC) response in film resistors fabricated on two different commercial n-type SIMOX (separation by implantation of oxygen) wafers. A broadband, single-shot, flashlamp-pumped dye-laser pulse was used to photoexcite interband electrons in the film, and the decay of the induced excess carrier population was measured at temperatures in the 60-220 K range. The post-illumination conductivity transients observed show PPC signals exhibiting a nonexponential character. They were recorded for periods of time up to 30 s at constant temperature. Presented are the excess conductivity in SIMOX film annealed in nitrogen at 1300 degrees C for 6 h and the hole-trap volume density at the conductive-film-buried-silicon interface.<>
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