G. He, M. Le, P. Partyka, R. Hess, G. Kim, R. Lee, R. Bryie, E. Sovero, M. Helix, R. Milano
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引用次数: 7
摘要
第二代0.5毫安InP双异质结双极晶体管(DHBT)技术已经开发出来，具有出色的可制造性和可扩展性，适用于先进的射频和混合信号集成电路应用。它采用自对准耐火金属基欧姆触点，EB和BC结的边缘钝化，以及成熟的互连工艺。通过工艺和外接结构优化，最近的实验高速器件的fT和fmax分别超过400 GHz和450 GHz，大功率器件的BVCEO分别超过20 V，膝电压低于0.5 V
Recent Advances in InP DHBT Manufacturing Technology
A second-generation 0.5 mum InP double heterojunction bipolar transistor (DHBT) technology has been developed with outstanding manufacturability and scalability for advanced RF and mixed-signal integrated-circuit applications. It incorporates self-aligned refractory-metal-based ohmic contacts, ledge passivation for both the EB and BC junctions, and a mature interconnect process. Through process and epi-structure optimization, recent experimental high-speed devices yielded over 400 GHz fT and 450 GHz fmax, and separately, high-power devices yielded BVCEO over 20 V with knee voltage under 0.5 V
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