分层多组DRAM:一种集成了处理器的高性能存储器体系结构

T. Yamauchi, Lance Hammond, K. Olukotun
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引用次数: 35

摘要

在同一芯片上集成DRAM的微处理器有可能通过减少内存延迟和提高内存带宽来提高系统性能。然而,由于嵌入式DRAM的周期时间长,高性能微处理器通常会发送比DRAM所能处理的更多的访问,特别是在具有显着内存要求的应用中。多组DRAM可以通过允许DRAM并行处理多个访问来隐藏长周期时间,但它会导致显著的面积损失,因此会限制嵌入式DRAM主存储器的密度。在本文中,我们提出了一种分层多组DRAM架构,以最小的面积损失实现高系统性能。在这个体系结构中,独立的内存库被分成许多半独立的子库,这些子库共享I/O和解码器资源。具有4个主银行的分层多银行DRAM,每个主银行由32个子银行组成,其占地面积与传统的4银行DRAM大致相同,而性能与32银行DRAM相似,当与单芯片多处理器集成时,比传统的4银行DRAM高出65%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The hierarchical multi-bank DRAM: a high-performance architecture for memory integrated with processors
A microprocessor integrated with DRAM on the same die has the potential to improve system performance by reducing the memory latency and improving the memory bandwidth. However a high performance microprocessor will typically send more accesses than the DRAM can handle due to the long cycle time of the embedded DRAM, especially in applications with significant memory requirements. A multi-bank DRAM can hide the long cycle time by allowing the DRAM to process multiple accesses in parallel, but it will incur a significant area penalty and will therefore restrict the density of the embedded DRAM main memory. In this paper we propose a hierarchical multi-bank DRAM architecture to achieve high system performance with a minimal area penalty. In this architecture, the independent memory banks are each divided into many semi-independent subbanks that share I/O and decoder resources. A hierarchical multi-bank DRAM with 4 main banks each composed of 32 subbanks occupies approximately the same area as a conventional 4 bank DRAM while performing like a 32 bank one-up to 65% better than a conventional 4 bank DRAM when integrated with a single-chip multiprocessor.
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