{"title":"分层多组DRAM:一种集成了处理器的高性能存储器体系结构","authors":"T. Yamauchi, Lance Hammond, K. Olukotun","doi":"10.1109/ARVLSI.1997.634862","DOIUrl":null,"url":null,"abstract":"A microprocessor integrated with DRAM on the same die has the potential to improve system performance by reducing the memory latency and improving the memory bandwidth. However a high performance microprocessor will typically send more accesses than the DRAM can handle due to the long cycle time of the embedded DRAM, especially in applications with significant memory requirements. A multi-bank DRAM can hide the long cycle time by allowing the DRAM to process multiple accesses in parallel, but it will incur a significant area penalty and will therefore restrict the density of the embedded DRAM main memory. In this paper we propose a hierarchical multi-bank DRAM architecture to achieve high system performance with a minimal area penalty. In this architecture, the independent memory banks are each divided into many semi-independent subbanks that share I/O and decoder resources. A hierarchical multi-bank DRAM with 4 main banks each composed of 32 subbanks occupies approximately the same area as a conventional 4 bank DRAM while performing like a 32 bank one-up to 65% better than a conventional 4 bank DRAM when integrated with a single-chip multiprocessor.","PeriodicalId":201675,"journal":{"name":"Proceedings Seventeenth Conference on Advanced Research in VLSI","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"35","resultStr":"{\"title\":\"The hierarchical multi-bank DRAM: a high-performance architecture for memory integrated with processors\",\"authors\":\"T. Yamauchi, Lance Hammond, K. Olukotun\",\"doi\":\"10.1109/ARVLSI.1997.634862\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A microprocessor integrated with DRAM on the same die has the potential to improve system performance by reducing the memory latency and improving the memory bandwidth. However a high performance microprocessor will typically send more accesses than the DRAM can handle due to the long cycle time of the embedded DRAM, especially in applications with significant memory requirements. A multi-bank DRAM can hide the long cycle time by allowing the DRAM to process multiple accesses in parallel, but it will incur a significant area penalty and will therefore restrict the density of the embedded DRAM main memory. In this paper we propose a hierarchical multi-bank DRAM architecture to achieve high system performance with a minimal area penalty. In this architecture, the independent memory banks are each divided into many semi-independent subbanks that share I/O and decoder resources. A hierarchical multi-bank DRAM with 4 main banks each composed of 32 subbanks occupies approximately the same area as a conventional 4 bank DRAM while performing like a 32 bank one-up to 65% better than a conventional 4 bank DRAM when integrated with a single-chip multiprocessor.\",\"PeriodicalId\":201675,\"journal\":{\"name\":\"Proceedings Seventeenth Conference on Advanced Research in VLSI\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"35\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings Seventeenth Conference on Advanced Research in VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARVLSI.1997.634862\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Seventeenth Conference on Advanced Research in VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARVLSI.1997.634862","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The hierarchical multi-bank DRAM: a high-performance architecture for memory integrated with processors
A microprocessor integrated with DRAM on the same die has the potential to improve system performance by reducing the memory latency and improving the memory bandwidth. However a high performance microprocessor will typically send more accesses than the DRAM can handle due to the long cycle time of the embedded DRAM, especially in applications with significant memory requirements. A multi-bank DRAM can hide the long cycle time by allowing the DRAM to process multiple accesses in parallel, but it will incur a significant area penalty and will therefore restrict the density of the embedded DRAM main memory. In this paper we propose a hierarchical multi-bank DRAM architecture to achieve high system performance with a minimal area penalty. In this architecture, the independent memory banks are each divided into many semi-independent subbanks that share I/O and decoder resources. A hierarchical multi-bank DRAM with 4 main banks each composed of 32 subbanks occupies approximately the same area as a conventional 4 bank DRAM while performing like a 32 bank one-up to 65% better than a conventional 4 bank DRAM when integrated with a single-chip multiprocessor.