{"title":"射频MEMS开关的射频特性随衬底电阻率的变化","authors":"S. Kang, S. Park, H.C. Kim, K. Chun","doi":"10.1109/GSMM.2008.4534624","DOIUrl":null,"url":null,"abstract":"This paper presents the RF characteristics of the RF MEMS switch as the silicon substrate resistivity. The larger the resistivity of silicon substrate is, the larger the insertion loss of the RF MEMS switch is. When the RF MEMS switch is fabricated with the single crystalline silicon, the RF characteristics are changed by resistivity of silicon. It is necessary to study the change of RF characteristics as the substrate resistivity. The RF characteristics were simulated with different resistivity of silicon substrate. The RF MEMS switches were fabricated on each substrate with different resistivity. The RF MEMS switch was fabricated with the resistivity of 10 ohm-cm, the insertion loss of that is about 0.2 dB at 6 GHz. And the RF MEMS switch was fabricated with the resistivity of 500 Ohm-cm, the insertion loss of that is about 0.6 dB at 6 GHz.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"The RF Characteristics of the RF MEMS Switch as the Substrate Resistivity\",\"authors\":\"S. Kang, S. Park, H.C. Kim, K. Chun\",\"doi\":\"10.1109/GSMM.2008.4534624\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the RF characteristics of the RF MEMS switch as the silicon substrate resistivity. The larger the resistivity of silicon substrate is, the larger the insertion loss of the RF MEMS switch is. When the RF MEMS switch is fabricated with the single crystalline silicon, the RF characteristics are changed by resistivity of silicon. It is necessary to study the change of RF characteristics as the substrate resistivity. The RF characteristics were simulated with different resistivity of silicon substrate. The RF MEMS switches were fabricated on each substrate with different resistivity. The RF MEMS switch was fabricated with the resistivity of 10 ohm-cm, the insertion loss of that is about 0.2 dB at 6 GHz. And the RF MEMS switch was fabricated with the resistivity of 500 Ohm-cm, the insertion loss of that is about 0.6 dB at 6 GHz.\",\"PeriodicalId\":304483,\"journal\":{\"name\":\"2008 Global Symposium on Millimeter Waves\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Global Symposium on Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GSMM.2008.4534624\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Global Symposium on Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2008.4534624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The RF Characteristics of the RF MEMS Switch as the Substrate Resistivity
This paper presents the RF characteristics of the RF MEMS switch as the silicon substrate resistivity. The larger the resistivity of silicon substrate is, the larger the insertion loss of the RF MEMS switch is. When the RF MEMS switch is fabricated with the single crystalline silicon, the RF characteristics are changed by resistivity of silicon. It is necessary to study the change of RF characteristics as the substrate resistivity. The RF characteristics were simulated with different resistivity of silicon substrate. The RF MEMS switches were fabricated on each substrate with different resistivity. The RF MEMS switch was fabricated with the resistivity of 10 ohm-cm, the insertion loss of that is about 0.2 dB at 6 GHz. And the RF MEMS switch was fabricated with the resistivity of 500 Ohm-cm, the insertion loss of that is about 0.6 dB at 6 GHz.
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