一种用于LTE MTC应用的高线性上转换混频器

2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC) Pub Date : 2019-11-10 DOI:10.1109/IMOC43827.2019.9317594

Jing Feng, Xiangning Fan, Xin Chen

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引用次数: 0

摘要

提出了一种采用台积电1P9M65nm标准CMOS工艺制作的上转换混频器，以满足LTE MTC通信的要求。本混频器设计用于中频为lOMHz，本振频率为1.9 GHz，电源电压为1.2 V。采用折叠结构和阻性源反馈，在不消耗过大电压净空的情况下提高了线性度。在跨导级的漏极上增加了滤波电容，以减轻从LO端口到IF端口的馈通。该混频器的转换增益为1.46 dB，输出三阶截距为17.7 dBm, LO-RF隔离度为-230dB。

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A High Linearity Up-Conversion Mixer for LTE MTC Applications

The paper presents an up-conversion mixer fabricated in standard TSMC 1P9M65nm CMOS process to meet the requirements for LTE MTC communications. The present mixer is designed for IF frequency of lOMHz, LO frequency of 1.9 GHz with a supply voltage of 1.2 V. A folded structure and resistive source feedback are employed to improve the linearity without consuming excessive voltage headroom. Filter capacitors are added to the drain of the transconductance stage to alleviate the feedthrough from LO port to IF port. The mixer achieves a conversion gain of 1.46 dB, an output thirdorder intercept of17.7 dBm and a LO-RF isolation of -230dB.

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2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)

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