M. D. Jiménez, P. Rosales-Quintero, A. Torres-Jácome, J. Molina-Reyes, M. Moreno-Moreno, F. J. de la Hidalga-Wade, C. Zuñiga-Islas, W. Calleja-Arriaga
{"title":"自旋玻璃作为薄膜晶体管的低温栅绝缘体","authors":"M. D. Jiménez, P. Rosales-Quintero, A. Torres-Jácome, J. Molina-Reyes, M. Moreno-Moreno, F. J. de la Hidalga-Wade, C. Zuñiga-Islas, W. Calleja-Arriaga","doi":"10.1109/CERMA.2010.87","DOIUrl":null,"url":null,"abstract":"In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. The SOG film was deposited at a temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. We demonstrated the use of SOG as gate insulator, fabricating and characterizing a-SiGe: H TFTs.","PeriodicalId":119218,"journal":{"name":"2010 IEEE Electronics, Robotics and Automotive Mechanics Conference","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spin-On Glass as Low-Temperature Gate Insulator for Thin-Film Transistors\",\"authors\":\"M. D. Jiménez, P. Rosales-Quintero, A. Torres-Jácome, J. Molina-Reyes, M. Moreno-Moreno, F. J. de la Hidalga-Wade, C. Zuñiga-Islas, W. Calleja-Arriaga\",\"doi\":\"10.1109/CERMA.2010.87\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. The SOG film was deposited at a temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. We demonstrated the use of SOG as gate insulator, fabricating and characterizing a-SiGe: H TFTs.\",\"PeriodicalId\":119218,\"journal\":{\"name\":\"2010 IEEE Electronics, Robotics and Automotive Mechanics Conference\",\"volume\":\"143 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-09-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Electronics, Robotics and Automotive Mechanics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CERMA.2010.87\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Electronics, Robotics and Automotive Mechanics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CERMA.2010.87","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在这项工作中，我们报道了自旋玻璃(SOG)作为低温栅绝缘子的表征。在200°C的温度下沉积SOG薄膜，该薄膜与柔性基板兼容。光学和电学表征表明，其折射率和介电常数与热生长SiO2的折射率和介电常数非常接近。我们演示了使用SOG作为栅极绝缘体，制造和表征a-SiGe: H tft。
Spin-On Glass as Low-Temperature Gate Insulator for Thin-Film Transistors
In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. The SOG film was deposited at a temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. We demonstrated the use of SOG as gate insulator, fabricating and characterizing a-SiGe: H TFTs.
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