5G移动应用中45nm SOI CMOS 28/38GHz射频开关ESD防护影响研究

2018 IEEE Radio and Wireless Symposium (RWS) Pub Date : 1900-01-01 DOI:10.1109/RWS.2018.8304973

Chenkun Wang, Fei Lu, Qi Chen, Feilong Zhang, Cheng Li, Dawn Wang, Albert Z. H. Wang

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引用次数: 6

摘要

本文首次研究了片上静电放电(ESD)保护对第五代移动网络(5G)移动应用中采用45nm SOI CMOS设计的28GHz/ 38GHz射频开关的影响。制作了具有5二极管二极管串和可控硅ESD保护结构的单极双掷(SPDT)开关，并对其进行了表征。测量和分析表明，静电诱导的寄生效应对SPDT插入损耗和隔离有严重影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A study of impacts of ESD protection on 28/38GHz RF switches in 45nm SOI CMOS for 5G mobile applications

This paper reports the first study of impacts of on-chip electrostatic discharge (ESD) protection on 28GHz/ 38GHz RF switches designed in a 45nm SOI CMOS for 5th generation mobile networks (5G) mobile applications. Single-pole-double-throw (SPDT) switches with 5-diode diode-string and silicon controlled rectifier (SCR) ESD protection structures were fabricated and characterized. Measurement and analysis reveal serious influences of ESD-induced parasitic effects on SPDT insertion loss and isolation.

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2018 IEEE Radio and Wireless Symposium (RWS)

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