SiGe基极HBT反基宽调制效应的电路仿真建模

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088503

T. Pesic, N. Jankovic, J. Karamarković

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引用次数: 0

摘要

本文描述了在非准静态SiGe基极HBT电路模型中加入逆基宽调制(IBWM)效应的方法。仿真结果表明，IBWM效应对HBT的电特性有很大影响，在SiGe HBT的精确建模中必须考虑IBWM效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation

We describe the method of including the inverse base width modulation (IBWM) effect in the non-quasi static SiGe base HBT circuit model. Simulated results reveal that the IBWM effect has strong influence on the HBT electrical characteristics and must be taken into account for accurate modeling of SiGe HBTs.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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