基于直接提取法的GaAs - pHEMT小信号建模

2020 International Conference on Intelligent Systems and Computer Vision (ISCV) Pub Date : 2020-06-01 DOI:10.1109/ISCV49265.2020.9204237

M. El bakkali, Said Elkhaldi, H. Elftouh, N. Touhami

{"title":"基于直接提取法的GaAs - pHEMT小信号建模","authors":"M. El bakkali, Said Elkhaldi, H. Elftouh, N. Touhami","doi":"10.1109/ISCV49265.2020.9204237","DOIUrl":null,"url":null,"abstract":"In this paper 16 elements small-signal equivalent circuit for GaAs pHEMT is presented. ED02AH process based on III-V materiel is chosen. This process is used in the improvement of telecommunication systems, space and defense applications. This work presents the results of direct extraction of the small signal or linear model based on an analytical method and measurements of the dispersion parameters [S]. The extraction of the parameters of the small signal equivalent scheme is done for an ED02AH (6x15$\\mu$m) process of GaAs technology, a transistor of 6 gate fingers, each with a width of 15 $\\mu$m. A good agreement between the simulated and measured parameters S confirms the validity of the proposed method.","PeriodicalId":313743,"journal":{"name":"2020 International Conference on Intelligent Systems and Computer Vision (ISCV)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Small-Signal Modeling of GaAs – pHEMT Using Direct Extraction Method\",\"authors\":\"M. El bakkali, Said Elkhaldi, H. Elftouh, N. Touhami\",\"doi\":\"10.1109/ISCV49265.2020.9204237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper 16 elements small-signal equivalent circuit for GaAs pHEMT is presented. ED02AH process based on III-V materiel is chosen. This process is used in the improvement of telecommunication systems, space and defense applications. This work presents the results of direct extraction of the small signal or linear model based on an analytical method and measurements of the dispersion parameters [S]. The extraction of the parameters of the small signal equivalent scheme is done for an ED02AH (6x15$\\\\mu$m) process of GaAs technology, a transistor of 6 gate fingers, each with a width of 15 $\\\\mu$m. A good agreement between the simulated and measured parameters S confirms the validity of the proposed method.\",\"PeriodicalId\":313743,\"journal\":{\"name\":\"2020 International Conference on Intelligent Systems and Computer Vision (ISCV)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Intelligent Systems and Computer Vision (ISCV)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCV49265.2020.9204237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Intelligent Systems and Computer Vision (ISCV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCV49265.2020.9204237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文设计了一种16元GaAs pHEMT小信号等效电路。选择基于III-V材料的ED02AH工艺。这一过程用于改进电信系统、空间和国防应用。这项工作提出了基于分析方法和色散参数测量的直接提取小信号或线性模型的结果[S]。小信号等效方案的参数提取是针对GaAs技术的ED02AH (6x15$\mu$m)工艺进行的，该工艺是一个具有6个门指的晶体管，每个门指的宽度为15$\mu$m。模拟参数S与实测参数S吻合较好，验证了所提方法的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Small-Signal Modeling of GaAs – pHEMT Using Direct Extraction Method

In this paper 16 elements small-signal equivalent circuit for GaAs pHEMT is presented. ED02AH process based on III-V materiel is chosen. This process is used in the improvement of telecommunication systems, space and defense applications. This work presents the results of direct extraction of the small signal or linear model based on an analytical method and measurements of the dispersion parameters [S]. The extraction of the parameters of the small signal equivalent scheme is done for an ED02AH (6x15$\mu$m) process of GaAs technology, a transistor of 6 gate fingers, each with a width of 15 $\mu$m. A good agreement between the simulated and measured parameters S confirms the validity of the proposed method.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 International Conference on Intelligent Systems and Computer Vision (ISCV)

自引率

0.00%

发文量