H. Shimizu, C. Setiagung, M. Ariga, K. Kumada, T. Hama, N. Ueda, N. Iwai, A. Kasukawa
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1.3 /spl mu/m-band low threshold GaInNAsSb quantum well lasers
1.3 /spl mu/m-range GaInNAsSb quantum well lasers that include small amount of Sb as the composition were confirmed to increase the critical thickness at which the growth mode changes from the 2-dimentional (2-D) growth to the 3-dimentional (3-D) growth. By adopting GaNAs barriers instead of GaAs barriers, we obtained the very low Jth of 160A/cm/sup 2//well up to 5QWs. We applied this material to the VCSELs, and the obtained threshold currents of 10ch-arrays are as uniform as 1.85/spl plusmn/0.15mA at 25/spl deg/C.
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