使用忆阻装置的可重构阈值逻辑门

2012 IEEE Subthreshold Microelectronics Conference (SubVT) Pub Date : 2012-10-01 DOI:10.3390/JLPEA3020174

Thanh Tran, A. Rothenbuhler, E. H. B. Smith, V. Saxena, K. Campbell

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引用次数: 35

摘要

我们提出了我们的早期设计探索可重构阈值逻辑门(TLG)实现使用银硫系记忆器件与CMOS电路相结合。利用单层TLG在Matlab-Simulink/Cadence联合仿真中实现了多种线性可分逻辑函数，包括AND、OR、NAND和NOR。通过重新编程忆阻器件的电阻，可以在这些操作之间改变功能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reconfigurable Threshold Logic Gates using memristive devices

We present our early design exploration of reconfigurable Threshold Logic Gates (TLG) implemented using Silver-chalcogenide memristive devices combined with CMOS circuits. A variety of linearly separable logic functions including AND, OR, NAND, NOR have been realized in a Matlab-Simulink/Cadence co-simulation using a single-layer TLG. The functionality can be changed between these operations by reprogramming the resistance of the memristive devices.

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2012 IEEE Subthreshold Microelectronics Conference (SubVT)

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