用于直流参数和s参数仿真的一致和可扩展的PSPICE hfet模型

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193173

S. Ehrich, R. Bertenburg, M. Agethen, A. Brennemann, W. Brockerhoff, F. Tegude

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引用次数: 1

摘要

对于直接耦合场效应晶体管(DCFL)中使用耗尽型和增强型异质结构场效应晶体管(HFET)实现的数字电路的仿真，需要一个能够描述这两种类型晶体管的一致模型。开发的分析PSPICE模型考虑了所有相关的内在效应和寄生效应。该模型可用于直流和射频仿真，并且可以根据栅极宽度和栅极长度进行缩放。

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A consistent and scalable PSPICE HFET-Model for DC- and S-parameter-simulation

For simulation of digital circuits realized in Direct Coupled FET Logic (DCFL) using depletion-type as well as enhancement-type Heterostructure-Field Effect Transistors (HFET) a consistent model that is able to describe both types of transistors is necessary. The developed analytical PSPICE model takes into account all relevant intrinsic and parasitic effects. This model can be used for dc- as well as rf-simulations and is scaleable with respect to gate-width as well as gate-length.

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来源期刊

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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