基于经验赝势法的带间耦合计算IV族和III-V族纳米结构的能带结构

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551706

D. Rideau, G. Mugny, M. Pala, D. Esseni

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摘要

本文系统地分析了利用基于经验赝势法的体带线性组合来获得受限纳米结构的带结构。强调了III-V材料中导电带和价带之间带间耦合的相关性。

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Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

This paper presents a systematic analysis of the use of the linear combination of bulk bands based on the empirical pseudopotential method to obtain the bandstructure of confined nanostructures. The relevance of interband coupling between conduction and valence bands in III-V materials is highlighted.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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