InP和GaAs晶圆键合:界面表征和器件应用

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328200

L. Yang, K. Carey, M. Ludowise, W. Perez, D. Mars, J. Fouquet, K. Nauka, S. J. Rosner, Rajeev J Ram, J. J. Dudley, D. Babic, J. Bowers

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引用次数: 2

摘要

晶圆键合是一种利用不同材料表面键的重排形成单一杂化固体的技术。虽然硅相关材料的键合已经得到了广泛的研究，但对III-V材料体系的研究却很少。我们已经成功地粘合了InP和GaAs。尽管存在3.7%的晶格失配，但在距离键合界面小于0.2 /spl mu/m的范围内仍能保持优异的材料质量。采用透射电子显微镜(TEM)、深能级瞬态光谱(DLTS)、电子束感应电流(EBIC)、光致发光(PL)和光反射等测量方法对键合界面进行了表征，得到了一致的结果。

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Wafer bonding of InP and GaAs: interface characterization and device applications

Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of silicon-related material has been studied extensively, very little work was devoted to the III-V material system. We have successfully bonded InP and GaAs. In spite of the 3.7% lattice-mismatch, excellent material quality can be preserved less than 0.2 /spl mu/m away from the bonded interface. Transmission electron micrograph (TEM), deep level transient spectroscopy (DLTS), electron beam induced current (EBIC), photoluminescence (PL) and optical reflection measurements were used to characterize the bonded interface, and consistent results were obtained.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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