三维NAND闪存电荷阱层中孔在保留过程中横向迁移机制的建模

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782975

Jaeyeol Park, Hyungcheol Shin

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引用次数: 3

摘要

本文分析了三维NAND闪存在保留操作过程中空穴(LM)的横向迁移机制。采用技术计算机辅助设计(TCAD)仿真研究了保留特性，并采用威布尔累积分布函数(WCD)建模。通过模型方程提取了不同温度下的时间常数$(\tau)$。最后，应用Arrhenius方程提取了LM的活化能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation

In this paper, we analyzed lateral migration mechanism of holes (LM) in 3D NAND Flash memory during retention operation. Retention characteristics were investigated using Technology Computer-Aided Design (TCAD) simulation and modeled using Weibull cumulative distribution function (WCD). Time-constant $(\tau)$ at various temperatures were extracted through the modeled equation. Finally, the activation energy (Ea) of LM was extracted by applying to the Arrhenius equation.

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2019 Silicon Nanoelectronics Workshop (SNW)

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