异质结构II-VI材料及红外成像器件

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791591

R. Ashokan, S. Sivananthan

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摘要

本文讨论了红外成像用II-VI异质结构材料和器件的最新进展，重点介绍了分子束外延和双层平面异质结构器件的制备。比较了在不同衬底取向上生长的碲化镉层的质量。在CdTe/Si上生长的HgCdTe与在CdZnTe / CdTe上生长的HgCdTe相当。展示了由HgCdTe/CdTe/Si制成的器件的最新性能。

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Heterostructure II-VI materials and devices for infrared imaging

The recent developments in the II-VI heterostructure materials and devices for infrared imaging applications, with particular emphasize on molecular beam epitaxy and fabrication of double layer planar heterostructure devices are discussed. Quality of the CdTe layers grown on different substrate orientations are compared. The HgCdTe grown on CdTe/Si is shown to be comparable to that of HgCdTe/CdZnTe. State-of-the-Art performance of devices made on HgCdTe/CdTe/Si is demonstrated.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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