级联码开关中半导体器件的开关性能

IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting Pub Date : 1996-10-06 DOI:10.1109/IAS.1996.559269

T. Chan, M. Morcos

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引用次数: 0

摘要

在目前广泛使用的半导体功率开关中，栅极关断(GTO)晶闸管具有最高的额定电压和电流。在级联码开关中，采用绝缘栅双极晶体管(IGBT)来提高GTO的开关性能。本文研究了用于igbt门控gto级联码开关的不同功率半导体器件的开关性能。利用SPICE对级联开关进行了测试和仿真。实验波形与仿真结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the switching performance of semiconductor devices in a cascode switch

The gate turn-off (GTO) thyristor has the highest voltage and current rating among the semiconductor power switches used extensively today. The insulated-gate bipolar transistor (IGBT) is used to improve switching performance of a GTO in a cascode switch. This paper documents the switching performance of the different power semiconductor devices used in an IGBT-gated GTO-cascode switch. The cascode switch was tested and simulated using SPICE. Experimental waveforms are presented and show good agreement with simulation results.

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IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting

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