利用鲁棒参数设计和逐行控制改进研磨工艺

Yongduo Ning, Yong Bian, B. Liu
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引用次数: 3

摘要

研磨是晶圆制造的关键步骤。晶圆片的一些质量特征,如总厚度变化(TTV)和厚度,很大程度上取决于研磨。一个研磨过程有一系列的因素。在实践中,有些因素一旦确定就很少改变;而其他一些人则持续在线调谐。我们将这些因素分为在线因素、离线因素、不可控因素和噪声。本文分析了研磨因素的物理机理,并对研磨过程进行了实验研究。通过鲁棒参数设计(robust parameter design, RPD)对离线因素进行优化;在线因子通过双指数加权移动平均控制进行优化。验证实验证明,RPD和RtR控制分别有助于改善TTV和批间厚度变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improving a lapping process using robust parameter design and run-to-run control
Lapping is a critical step of wafer manufacture. Some wafer quality characteristics, such as total thickness variation (TTV) and thickness, are largely determined by lapping. A lapping process has a collection of factors. In practice, some factors are seldom changed once been fixed; while some others are tuned online continuously. We classify the factors into online factors, offline factors, uncontrollable factors, and noises. In this work, we analyze the physical mechanism of lapping factors then conduct experiments to study the lapping process. Offline factors are optimized via the robust parameter design (RPD); online factors are optimized via the double exponential weighted moving average Run-to-Run control. Verifying experiments proved that the RPD and RtR control can help to improve the TTV and the batch-to-batch thickness variation, respectively.
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