带新型微带平衡的单片宽带双平衡EHF HBT星形混频器

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI:10.1109/MCS.1995.470969

Y. Ryu, K. Kobayashi, A. Oki

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引用次数: 21

摘要

本文介绍了一种利用在4mil厚的砷化镓衬底上制作的新型平衡棒的平面MMIC - HBT肖特基二极管混频器。该平衡器基于Marchand平衡器结构，并在微带环境中实现。平衡结构由7条紧密耦合的微带线和背面通孔组成。四个10/spl倍/10 /spl μ /m/sup 2/ HBT肖特基二极管在星形配置提供混合功能。HBT二极管的截止频率超过750ghz。该混频器在26-40 GHz RF和LO带宽以及DC-11 GHz中频范围内实现8-10 dB转换损耗和非常低的杂散响应。这种中频带宽比先前演示的使用InGaAs HEMT技术的CPW星形混频器更宽，并且由于其微带实现而更容易集成到组件中。

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A monolithic broadband doubly balanced EHF HBT star mixer with novel microstrip baluns

This paper describes a planar MMIC HBT Schottky diode mixer utilizing novel baluns fabricated on a 4 mil thick GaAs substrate. The balun is based on the Marchand balun structure and is implemented in a microstrip environment. The balun structure consists of 7 closely coupled microstrip lines and backside vias. Four 10/spl times/10 /spl mu/m/sup 2/ HBT Schottky diodes in a star configuration provide the mixing function. The HBT diodes have cut-off frequencies in excess of 750 GHz. The mixer achieves 8-10 dB conversion loss and very low spurious responses over a 26-40 GHz RF and LO bandwidth and DC-11 GHz IF. This IF bandwidth is broader than a previously demonstrated CPW star mixer using InGaAs HEMT technology, and easier to integrate into an assembly due to its microstrip implementation.<>

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来源期刊

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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