Nonlinear optical properties of semiconductor thin films and multilayer structures containing such films

Summary form only given: Refraction and absorption indices dependencies on the optical field intensity for deposited thin films of certain semiconductors and some other materials in the near-infrared range have been experimentally obtained by using Z-scan technique. Multilayer structures containing such films with high nonlinear coefficients as one or several constituent layers are very promising in the context of low-threshold nonlinear optical devices.