一个22.8 GHz至32.8 GHz紧凑型功率放大器，输出P1dB为15 dBm，峰值PAE为36.5%，采用65nm CMOS

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2022-10-28 DOI:10.1109/ICTA56932.2022.9963053

Huabing Liao, Haikun Jia, Xiangrong Huang, Bao Shi, W. Deng, B. Chi, Zhihua Wang

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引用次数: 1

摘要

提出了一种基于夹层变压器输出匹配网络的CMOS宽带毫米波功率放大器。针对PA的输出匹配网络，提出了具有三层结构的ST输出匹配网络，其耦合系数(k)大于传统的两层堆叠结构。优化了晶体管的布局，提高了放大器的性能。PA采用65纳米CMOS工艺制造，实现了15 dBm OP1dBand 36.5%的峰值功率附加效率(PAE)。PA的3db带宽范围为22.8 GHz ~ 32.8 GHz。

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A 22.8 GHz to 32.8 GHz Compact Power Amplifier with a 15 dBm Output P1dB and 36.5% Peak PAE in 65-nm CMOS

A CMOS broadband millimeter-wave power amplifier (PA) based on a Sandwiched Transformer (ST) output matching network is presented in this paper. The ST output matching network with a three-layer structure providing a larger coupling coefficient (k) than the traditional two-layer stack structure is proposed for PA's output matching network. The layout of the transistors is optimized to improve the PA's performance. Fabricated in 65-nm CMOS process, the PA has achieved 15 dBm OP1dBand 36.5% peak power added efficiency (PAE). The 3-dB bandwidth of the PA is from 22.8 GHz to 32.8 GHz.

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2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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