{"title":"一个1瓦的ku波段功率放大器在SiGe, 37.5%的PAE","authors":"Ying Chen, M. van der Heijden, D. Leenaerts","doi":"10.1109/RFIC.2016.7508317","DOIUrl":null,"url":null,"abstract":"This paper demonstrates a 1-Watt output power amplifier MMIC operating from 13.5GHz to 14.5GHz (Ku-band). The power amplifier employs an on-chip integrated 16-way in-phase output current combiner to achieve the required output power. Implemented in a 0.25-μm SiGe:C BiCMOS technology, the power amplifier achieves a power-added efficiency of 37.5% at 14.1GHz with greater than 35.5% across the band of interest.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A 1-Watt Ku-band power amplifier in SiGe with 37.5% PAE\",\"authors\":\"Ying Chen, M. van der Heijden, D. Leenaerts\",\"doi\":\"10.1109/RFIC.2016.7508317\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates a 1-Watt output power amplifier MMIC operating from 13.5GHz to 14.5GHz (Ku-band). The power amplifier employs an on-chip integrated 16-way in-phase output current combiner to achieve the required output power. Implemented in a 0.25-μm SiGe:C BiCMOS technology, the power amplifier achieves a power-added efficiency of 37.5% at 14.1GHz with greater than 35.5% across the band of interest.\",\"PeriodicalId\":163595,\"journal\":{\"name\":\"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2016.7508317\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2016.7508317","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1-Watt Ku-band power amplifier in SiGe with 37.5% PAE
This paper demonstrates a 1-Watt output power amplifier MMIC operating from 13.5GHz to 14.5GHz (Ku-band). The power amplifier employs an on-chip integrated 16-way in-phase output current combiner to achieve the required output power. Implemented in a 0.25-μm SiGe:C BiCMOS technology, the power amplifier achieves a power-added efficiency of 37.5% at 14.1GHz with greater than 35.5% across the band of interest.