用于倒装芯片的电镀凸点焊料制造

Proceedings of 15th IEEE/CHMT International Electronic Manufacturing Technology Symposium Pub Date : 1993-10-04 DOI:10.1109/IEMT.1993.398191

K. Yu, F. Tung

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引用次数: 15

摘要

一步一步地描述了用于倒装芯片应用的焊料合金碰撞过程。重点放在75-/spl mu/m高的凸起上，当镀上时，使用传统的正光刻胶掩蔽成功地实现了间距为125-/spl mu/m的阵列图案。碰撞下冶金(UBM)是溅射Ti/Cu。讨论了60/40或5/95焊料合金的锡/铅组成及外露UBM上使用的蚀刻剂。该工艺与其他IC晶圆工艺兼容。焊料凹凸回流是利用松香助焊剂和热板实现的，热板在温度和环境中受到严格控制

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Solder bump fabrication by electroplating for flip-chip applications

A step-by-step description of a solder alloy bumping process for flip-chip application is discussed. Emphasis is placed on a 75-/spl mu/m high bump, as plated, with a pitch of 125-/spl mu/m array pattern is successfully achieved using conventional positive photoresist masking. The under-bump metallurgy (UBM) is sputtered Ti/Cu. The Sn/Pb composition of solder alloy such as 60/40 or 5/95 and the etchants used on the exposed UBM are discussed. This process is compatible with other IC wafer processes. The solder bump reflow is achieved utilizing a rosin flux and hot plate which is closely controlled in temperature and environment.<>

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Proceedings of 15th IEEE/CHMT International Electronic Manufacturing Technology Symposium

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