设计一种适用于GSM/Edge应用的低驻波比、低损耗SP6T开关。

D. Prikhodko, Y. Tkachenko, S. Sprinkle, R. Carter, S. Nabokin, J. Chiesa
{"title":"设计一种适用于GSM/Edge应用的低驻波比、低损耗SP6T开关。","authors":"D. Prikhodko, Y. Tkachenko, S. Sprinkle, R. Carter, S. Nabokin, J. Chiesa","doi":"10.1109/EMICC.2007.4412640","DOIUrl":null,"url":null,"abstract":"In this paper the design and measurement of a high performance SP6T GaAs pHEMT switch for Quad-Band GSM/EDGE Front-Ends are discussed. The design uses a novel approach to reduce the generated harmonic levels at 3 V supply, 35 dBm drive and antenna VSWR of 5:1 down to -40 dBm, the lowest levels for the multi-mode multi-throw switches reported to date. Besides low harmonic performance, low TX insertion loss of below 0.5 dB at 2 GHz and RX insertion loss of below 1 dB at 2 GHz is achieved.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Design of a low VSWR harmonics, low loss SP6T switch for GSM/Edge applications.\",\"authors\":\"D. Prikhodko, Y. Tkachenko, S. Sprinkle, R. Carter, S. Nabokin, J. Chiesa\",\"doi\":\"10.1109/EMICC.2007.4412640\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the design and measurement of a high performance SP6T GaAs pHEMT switch for Quad-Band GSM/EDGE Front-Ends are discussed. The design uses a novel approach to reduce the generated harmonic levels at 3 V supply, 35 dBm drive and antenna VSWR of 5:1 down to -40 dBm, the lowest levels for the multi-mode multi-throw switches reported to date. Besides low harmonic performance, low TX insertion loss of below 0.5 dB at 2 GHz and RX insertion loss of below 1 dB at 2 GHz is achieved.\",\"PeriodicalId\":436391,\"journal\":{\"name\":\"2007 European Microwave Integrated Circuit Conference\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2007.4412640\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2007.4412640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

本文讨论了一种用于四频GSM/EDGE前端的高性能SP6T GaAs pHEMT开关的设计和测量。该设计采用了一种新颖的方法,将3v电源、35dbm驱动和5:1的天线驻波比产生的谐波水平降低到- 40dbm,这是迄今为止报道的多模多投开关的最低水平。除低谐波性能外,还实现了2ghz时的低TX插入损耗低于0.5 dB, 2ghz时的低RX插入损耗低于1db。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a low VSWR harmonics, low loss SP6T switch for GSM/Edge applications.
In this paper the design and measurement of a high performance SP6T GaAs pHEMT switch for Quad-Band GSM/EDGE Front-Ends are discussed. The design uses a novel approach to reduce the generated harmonic levels at 3 V supply, 35 dBm drive and antenna VSWR of 5:1 down to -40 dBm, the lowest levels for the multi-mode multi-throw switches reported to date. Besides low harmonic performance, low TX insertion loss of below 0.5 dB at 2 GHz and RX insertion loss of below 1 dB at 2 GHz is achieved.
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