IGBT压装电源模块可靠性研究与建模

H. Long, M. Sweet, E. Narayanan, Gangru Li
{"title":"IGBT压装电源模块可靠性研究与建模","authors":"H. Long, M. Sweet, E. Narayanan, Gangru Li","doi":"10.1109/APEC.2017.7931082","DOIUrl":null,"url":null,"abstract":"The IGBT press-pack provides low inductance and simple module stack for high power and high voltage applications. In this work, the reliability of IGBT Press-Pack power modules is experimentally tested under RBSOA conditions to investigate their limitation and current scalability. The internal current distribution is analyzed by detailed 3D FEM simulation. This work reveals that the uneven distribution of current density is caused by different impedance in each IGBT die current conducting path, due to skin and proximity effects during switching transient. Stray and mutual inductances also affect current paths depending upon the location of IGBT within the package. The unbalanced switching times become larger as the package size increases with more parallel configured IGBTs. By extracting the FEM data into the proposed circuit model, the electrical performance will be discussed in detail.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"232 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Reliability study and modelling of IGBT press-pack power modules\",\"authors\":\"H. Long, M. Sweet, E. Narayanan, Gangru Li\",\"doi\":\"10.1109/APEC.2017.7931082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The IGBT press-pack provides low inductance and simple module stack for high power and high voltage applications. In this work, the reliability of IGBT Press-Pack power modules is experimentally tested under RBSOA conditions to investigate their limitation and current scalability. The internal current distribution is analyzed by detailed 3D FEM simulation. This work reveals that the uneven distribution of current density is caused by different impedance in each IGBT die current conducting path, due to skin and proximity effects during switching transient. Stray and mutual inductances also affect current paths depending upon the location of IGBT within the package. The unbalanced switching times become larger as the package size increases with more parallel configured IGBTs. By extracting the FEM data into the proposed circuit model, the electrical performance will be discussed in detail.\",\"PeriodicalId\":201289,\"journal\":{\"name\":\"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"volume\":\"232 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.2017.7931082\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.2017.7931082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

IGBT压包为高功率和高压应用提供了低电感和简单的模块堆栈。在这项工作中,IGBT压包电源模块的可靠性在RBSOA条件下进行了实验测试,以研究其局限性和当前可扩展性。通过三维有限元模拟详细分析了内部电流分布。这项工作揭示了由于开关瞬态过程中的趋肤效应和邻近效应,导致每个IGBT晶片电流传导路径的阻抗不同,从而导致电流密度分布不均匀。根据IGBT在封装中的位置,杂散和互感也会影响电流路径。随着igbt并行配置数量的增加,不平衡交换时间也随之增加。通过将有限元数据提取到所提出的电路模型中,详细讨论了电路的电气性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reliability study and modelling of IGBT press-pack power modules
The IGBT press-pack provides low inductance and simple module stack for high power and high voltage applications. In this work, the reliability of IGBT Press-Pack power modules is experimentally tested under RBSOA conditions to investigate their limitation and current scalability. The internal current distribution is analyzed by detailed 3D FEM simulation. This work reveals that the uneven distribution of current density is caused by different impedance in each IGBT die current conducting path, due to skin and proximity effects during switching transient. Stray and mutual inductances also affect current paths depending upon the location of IGBT within the package. The unbalanced switching times become larger as the package size increases with more parallel configured IGBTs. By extracting the FEM data into the proposed circuit model, the electrical performance will be discussed in detail.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信