基于CNFET的新型三元逻辑设计

Haiqing Nan, K. Choi
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引用次数: 30

摘要

随着CMOS技术的小型化,芯片的晶体管密度急剧增加,导致互连的复杂性增加。本文提出了一种新的基于碳纳米管场效应管(cnfet)的三元逻辑设计,并与以往基于cnfet的三元逻辑设计进行了比较。特别是在本文提出的基于cnfet的三元逻辑设计中,有效地利用了不同的背偏置电压和cnfet直径来实现超低功耗。利用HSPICE进行的大量仿真结果表明,与之前基于cnfet的三元逻辑设计相比,所提出的基于cnfet的三元逻辑门可以降低泄漏电流和功率延迟积(PDP)多个数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel ternary logic design based on CNFET
As CMOS technology is scaled down, transistor density of a chip is increased dramatically, which results in the increasing of the complexity of interconnections. In this paper, a novel design of ternary logic based on carbon nanotube FETs (CNFETs) is proposed and compared with the previous CNFET-based ternary logic designs. Especially, in the proposed CNFET-based ternary logic design, different back biasing voltages and diameters of CNFETs are effectively used to achieve ultra-low power consumption. Extensive simulation results using HSPICE are reported to show that the proposed CNFET-based ternary logic gate reduces leakage current and power delay product (PDP) multiple orders of magnitude compared to the previous CNFET-based ternary logic designs.
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