{"title":"高钝化Si/TiO2异质结的低温溶液处理","authors":"G. Sahasrabudhe","doi":"10.2139/ssrn.3101591","DOIUrl":null,"url":null,"abstract":"Thin film-based second and third generation photovoltaics (PVs) are avidly investigated for their potential for utility scale applications. Organic thin film (PEDOT) and silicon-based PVs are shown to have moderate device efficiency. To further improve efficiency, silicon is sandwiched between thin films of PEDOT and TiO<sub>2</sub>. Thin films of TiO<sub>2</sub> synthesized at 100°C have been shown to make efficient (~12%) PEDOT/Si/TiO<sub>2</sub>-based PVs; TiO<sub>2</sub> functions as a holeblocker. Lower efficiencies of the PVs than predicted by theory is attributed to poor passivation of the Si/TiO<sub>2</sub> interface. To improve the interface passivation, the Si/TiO<sub>2</sub> interface is treated under various chemical conditions. One such treatment yielded very high level of passivation (SRV ~ 15 cm/s).","PeriodicalId":202570,"journal":{"name":"ATSMDE 2017: Materials Engineering","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low Temperature Solution-Based Treatment for Highly Passivated Si/TiO2 Heterojunction\",\"authors\":\"G. Sahasrabudhe\",\"doi\":\"10.2139/ssrn.3101591\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin film-based second and third generation photovoltaics (PVs) are avidly investigated for their potential for utility scale applications. Organic thin film (PEDOT) and silicon-based PVs are shown to have moderate device efficiency. To further improve efficiency, silicon is sandwiched between thin films of PEDOT and TiO<sub>2</sub>. Thin films of TiO<sub>2</sub> synthesized at 100°C have been shown to make efficient (~12%) PEDOT/Si/TiO<sub>2</sub>-based PVs; TiO<sub>2</sub> functions as a holeblocker. Lower efficiencies of the PVs than predicted by theory is attributed to poor passivation of the Si/TiO<sub>2</sub> interface. To improve the interface passivation, the Si/TiO<sub>2</sub> interface is treated under various chemical conditions. One such treatment yielded very high level of passivation (SRV ~ 15 cm/s).\",\"PeriodicalId\":202570,\"journal\":{\"name\":\"ATSMDE 2017: Materials Engineering\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ATSMDE 2017: Materials Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2139/ssrn.3101591\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ATSMDE 2017: Materials Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2139/ssrn.3101591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Temperature Solution-Based Treatment for Highly Passivated Si/TiO2 Heterojunction
Thin film-based second and third generation photovoltaics (PVs) are avidly investigated for their potential for utility scale applications. Organic thin film (PEDOT) and silicon-based PVs are shown to have moderate device efficiency. To further improve efficiency, silicon is sandwiched between thin films of PEDOT and TiO2. Thin films of TiO2 synthesized at 100°C have been shown to make efficient (~12%) PEDOT/Si/TiO2-based PVs; TiO2 functions as a holeblocker. Lower efficiencies of the PVs than predicted by theory is attributed to poor passivation of the Si/TiO2 interface. To improve the interface passivation, the Si/TiO2 interface is treated under various chemical conditions. One such treatment yielded very high level of passivation (SRV ~ 15 cm/s).
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