硅光子学用硅基III-V量子点器件

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Pub Date : 2016-07-11 DOI:10.1109/PHOSST.2016.7548748

M. Tang, Siming Chen, Jiang Wu, M. Liao, Huiyun Liu

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引用次数: 0

摘要

在硅上单片集成III-V激光器是克服硅平台上缺乏高效光源问题的最有希望的解决方案。我们展示了第一个实用的硅基电信波长InAs/GaAs量子点激光器，具有低阈值电流密度，高输出功率，高工作温度和长寿命。

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Silicon-based III-V quantum dot devices for silicon photonics

Monolithically integrating III-V lasers on Si is the most promising solution to overcome the issue of lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications-wavelength InAs/GaAs quantum dot lasers with low threshold current density, high output power, high operation temperature and long lifetime.

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2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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