A 10 Mc NDRO BIAX memory of 1024 word, 48 bit per word capacity

Most of the approaches to fast read access memories in the past have been centered about the achievement of either faster conventional destructive switching, or the use of various non-destructive readout techniques and storage devices. Many of these techniques have inherent drawbacks for very fast read operation, such as the necessity for rewriting, in the case of conventional switching approaches, or the lack of truly non-destructive properties. The memory system described in this paper solves these problems by utilizing the BIAX memory element, with its inherently non-destructive readout properties, in a system organized to minimize circuit delays and utilize transmission line properties for the various signal paths. In this manner it is possible to achieve random read access times of 85 nanoseconds maximum since most inductive components are incorporated into the various transmission lines with the lines being terminated in their characteristic impedance. Not only is the memory designed for very high readout rates in the non-destructive mode, but it is electrically alterable with conventional linear select methods in five microseconds or less.