高应变FDSOI nmosfet中定向沟道的比较

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) Pub Date : 2012-03-06 DOI:10.1109/ULIS.2012.6193385

S. Morvan, F. Andrieu, M. Cassé, P. Nguyen, O. Weber, P. Perreau, C. Tabone, F. Allain, A. Toffoli, G. Ghibaudo, T. Poiroux

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引用次数: 1

摘要

我们制作了栅极长度为18nm的高应力FDSOI nmosfet。研究了不同应力源(CESL, STI)对不同器件几何形状和衬底取向的影响(;或者,)。我们证明STI可以降低中等栅极长度(0.2μm)的宽器件;与…相比;(-20%迁移率)，而短的nmosfet则随着;具有(1.6 GPa)拉伸CESL(+15%迁移率，+6%离子)。通过应力分布的压阻模型和解析模型可以很好地再现cesl诱导的迁移率增强。

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Comparison between <100> and <110> oriented channels in highly strained FDSOI nMOSFETs

We fabricated highly stressed FDSOI nMOSFETs down to 18nm gate length. The impact of different stressors (CESL, STI) is studied for different device geometries and substrates orientation (<;100>; or <;110>;). We evidence that STI degrades wide devices of intermediate gate length (0.2μm<;LG<;1μm) along <;100>; compared to <;110>; (-20% mobility) whereas short nMOSFETs are improved along <;100>; with a (1.6 GPa) tensile CESL (+15% mobility, +6% ION). The CESL-induced mobility enhancement can be reproduced rather well for the two channel orientations by the piezo-resistive model and an analytical model of the stress profile.

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2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

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