接地沟- mos结构辅助常关双极模功率场效应管

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509512

Y. Murakami, Y. Nakajima, T. Hayashi, T. Mihara

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引用次数: 4

摘要

研制了一种正常关断的双极模场效应管，其V/sub DSS/为700 V，结构为n/sup +/-n/sup -/-n/sup +/。该晶体管具有新型沟槽- mos结构。N/sup +/-源和N/sup /-通道被深沟- mos构造夹在中间，其电位固定于地面。它们实际上充当了长沟道JFET的栅极。p栅极与各绝缘膜接触，通过p型反转层的电位控制通道条件。当栅极短路时，通道可以承受雪崩条件。此外，它具有约400 V的V/sub DSO/。

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Grounded-trench-MOS structure assisted normally-off bipolar-mode power FET

A normally-off bipolar-mode FET having a V/sub DSS/ of 700 V with n/sup +/-n/sup -/-n/sup +/ structure has been developed. The transistor has a new type trench-MOS structure. N/sup +/-source and n/sup -/-channel are sandwiched by deep trench-MOS structures whose potential is fixed to the ground. They act virtually as the gates of a long-channel JFET. The p-gate contacts with every insulating film, which controls the channel conditions by the potential of p-type inversion layer. When the gate is shorted, the channel withstands up to the avalanche condition. Furthermore, it has a V/sub DSO/ of about 400 V.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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