具有低电磁干扰敏感性的带隙电压基准的稳健设计

2003 IEEE Symposium on Electromagnetic Compatibility. Symposium Record (Cat. No.03CH37446) Pub Date : 2003-10-14 DOI:10.1109/ISEMC.2003.1236610

A. Pretelli, A. Richelli, L. Colalongo, Z. Kovács-Vajna

{"title":"具有低电磁干扰敏感性的带隙电压基准的稳健设计","authors":"A. Pretelli, A. Richelli, L. Colalongo, Z. Kovács-Vajna","doi":"10.1109/ISEMC.2003.1236610","DOIUrl":null,"url":null,"abstract":"This paper addresses an approach to design bandgap voltage references which provides a good trade-off between overall performances and strong immunity to electromagnetic interferences. We investigated two classical topologies of bandgap references. The first circuit exhibits a 1200mV shift for interfering signals in the frequency range of 1MHz-4GHz, while the shift in the modified version of the same architecture is only 6mV. The second circuit exhibits a 300mV shift in the same frequency range while the shift in its modified version is only 20 mV.","PeriodicalId":359422,"journal":{"name":"2003 IEEE Symposium on Electromagnetic Compatibility. Symposium Record (Cat. No.03CH37446)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Robust design of bandgap voltage references with low EMI susceptibility\",\"authors\":\"A. Pretelli, A. Richelli, L. Colalongo, Z. Kovács-Vajna\",\"doi\":\"10.1109/ISEMC.2003.1236610\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper addresses an approach to design bandgap voltage references which provides a good trade-off between overall performances and strong immunity to electromagnetic interferences. We investigated two classical topologies of bandgap references. The first circuit exhibits a 1200mV shift for interfering signals in the frequency range of 1MHz-4GHz, while the shift in the modified version of the same architecture is only 6mV. The second circuit exhibits a 300mV shift in the same frequency range while the shift in its modified version is only 20 mV.\",\"PeriodicalId\":359422,\"journal\":{\"name\":\"2003 IEEE Symposium on Electromagnetic Compatibility. Symposium Record (Cat. No.03CH37446)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 IEEE Symposium on Electromagnetic Compatibility. Symposium Record (Cat. No.03CH37446)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEMC.2003.1236610\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 IEEE Symposium on Electromagnetic Compatibility. Symposium Record (Cat. No.03CH37446)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.2003.1236610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

本文提出了一种设计带隙电压基准的方法，该方法在整体性能和强抗电磁干扰之间提供了良好的权衡。我们研究了两种经典的带隙参考拓扑。第一个电路对1MHz-4GHz频率范围内的干扰信号表现出1200mV的偏移，而在相同架构的修改版本中，偏移仅为6mV。第二个电路在相同的频率范围内表现出300mV的位移，而其修改版本的位移仅为20mv。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Robust design of bandgap voltage references with low EMI susceptibility

This paper addresses an approach to design bandgap voltage references which provides a good trade-off between overall performances and strong immunity to electromagnetic interferences. We investigated two classical topologies of bandgap references. The first circuit exhibits a 1200mV shift for interfering signals in the frequency range of 1MHz-4GHz, while the shift in the modified version of the same architecture is only 6mV. The second circuit exhibits a 300mV shift in the same frequency range while the shift in its modified version is only 20 mV.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2003 IEEE Symposium on Electromagnetic Compatibility. Symposium Record (Cat. No.03CH37446)

自引率

0.00%

发文量