四氟环丁烷等离子体射流刻蚀晶体硅的初步研究

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782945

Chun-Hao Huang, Wei-Ting Liu, Weiliang Li, Li-Ko Huang, Yi-An Chen

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引用次数: 0

摘要

采用电容耦合射频双管常压等离子体射流进行微电子机械系统的刻蚀加工。蚀刻是在晶体硅衬底上进行的。腐蚀速率可由腐蚀气体组成和等离子体条件控制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Prelimniary Investigation of Octrafluorocyclobutane Plasma Jet Etching of Crystalline Silicon

A capacitive coupled radio frequency double-pipe atmospheric-pressure plasma jet is used for the etching process in fabricating Micro Electro Mechanical Systems. Etchings were carried out on a crystalline silicon substrate. The etching rates can be controlled by the etch gas composition and the plasma conditions.

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2019 Silicon Nanoelectronics Workshop (SNW)

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