{"title":"具有沟槽和自对准肖特基栅结构的gaas基RTT的设计、制造和表征","authors":"Wei-lian Guo, P. Niu, Xiao-yun Li, Chang-yun Miao, Wei Wang, Xin Yu, Yaoyao Shang, Zhen Feng, Guoping Tian, Yali Li, Yongqiang Liu, Mingwen Yuan, Xiao-Bai Li","doi":"10.1109/ICSICT.2008.4734594","DOIUrl":null,"url":null,"abstract":"In this paper, the design of material structure and device structure , fabrication processing and characterization on GaAs based Resonant Tunneling Transistor (RTT) with groove and self-aligned gate structure have been described completely and systematically .The experimental results measured from our fabricated RTT show that : the maximum value of Peak to Valley Current Ratio (PVCR) is 46, the transconductance gm is in a range of 1.3~8.0 ms, the cutoff frequency fTgm and speed index S are 1.59 GHz and 13.5 ps/V respectively .","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The design, fabrication and characterization of GaAs-based RTT with groove and self-aligned Schottky gate structure\",\"authors\":\"Wei-lian Guo, P. Niu, Xiao-yun Li, Chang-yun Miao, Wei Wang, Xin Yu, Yaoyao Shang, Zhen Feng, Guoping Tian, Yali Li, Yongqiang Liu, Mingwen Yuan, Xiao-Bai Li\",\"doi\":\"10.1109/ICSICT.2008.4734594\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the design of material structure and device structure , fabrication processing and characterization on GaAs based Resonant Tunneling Transistor (RTT) with groove and self-aligned gate structure have been described completely and systematically .The experimental results measured from our fabricated RTT show that : the maximum value of Peak to Valley Current Ratio (PVCR) is 46, the transconductance gm is in a range of 1.3~8.0 ms, the cutoff frequency fTgm and speed index S are 1.59 GHz and 13.5 ps/V respectively .\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734594\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734594","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design, fabrication and characterization of GaAs-based RTT with groove and self-aligned Schottky gate structure
In this paper, the design of material structure and device structure , fabrication processing and characterization on GaAs based Resonant Tunneling Transistor (RTT) with groove and self-aligned gate structure have been described completely and systematically .The experimental results measured from our fabricated RTT show that : the maximum value of Peak to Valley Current Ratio (PVCR) is 46, the transconductance gm is in a range of 1.3~8.0 ms, the cutoff frequency fTgm and speed index S are 1.59 GHz and 13.5 ps/V respectively .
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