高质量SiO/ sub2 /薄膜的极低光- cvd沉积速率工艺

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004067

V.M. Sanchez-Z, J. Munguía, M. Estrada

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引用次数: 0

摘要

利用光致化学气相沉积技术(photocvd)研究了SiO/sub 2/的极低沉积速率(低于0.56 nm/min)。这些低沉积速率足以生长非常薄和超薄的SiO/sub 2/层。详细介绍了反应室、反应气体和工艺参数的设计，以获得所需的沉积制度。讨论了沉积速率与腔内压力的关系。利用I-V和C-V技术对沉积层进行了表征。

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Very low photo-CVD deposition rate process for high quality thin SiO/sub 2/ films

Very low deposition rates, below 0.56 nm/min, of SiO/sub 2/ were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO/sub 2/. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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