利用铁电场效应晶体管的高能效三元内容可寻址存储器

Luo Xudong, Yin Xunzhao
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引用次数: 0

摘要

为了克服传统冯·诺依曼计算机的“内存墙”问题,人们对内存计算电路进行了广泛的研究,其中计算任务在内存块内执行。三元内容可寻址内存(TCAM)是CiM常用的电路,它针对给定的查询在整个内存中执行并行搜索。TCAM具有广泛的应用场景,如IP路由器、联想存储器和先进的机器学习模型等。目前,一些非易失性器件,如电阻性随机存取存储器(reram)、铁电晶体管(fefet),被用于TCAM设计以提高面积效率。然而,由于TCAM通常与计算单元并行工作,因此其能耗是我们更关心的方面之一。在本文中,我们设计了两种节能的基于ffet的TCAM设计,通过减小匹配线电容或消除预充电相位来减少搜索能量,然后使用Spectre验证电路功能,并将所提出的两种ffet TCAM与现有几种具有代表性的TCAM在单元尺寸,能耗和延迟方面进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energy-efficient Ternary Content Addressable Memory Using Ferroelectric FET
To overcome the Memory Wall problem in the traditional von Neumann machines, computing in-memory (CiM) circuits where computational tasks are performed within the memory blocks are widely investigated. Ternary content addressable memory (TCAM) is a commonly used circuit for CiM, which performs parallel searches across the entire memory against a given query. TCAM has a wide range of application scenarios, such as IP routers, associative memories and advanced machine learning models, etc. Currently some non-volatile devices, for example, resistive random access memories (ReRAMs), ferroelectric transistors (FeFETs), are employed in TCAM designs for improved area efficiency. However, since TCAM often works in parallel with the computational unit, its energy consumption is one of the aspects that we are more concerned about. In this paper, we design two energy-efficient FeFET-based TCAM designs by either reducing the matching line capacitance or eliminating the pre-charging phase to reduce the search energy, and then use Spectre to validate the circuit functionality, and compare the proposed two FeFET TCAMs with several existing representative TCAMs in terms of cell size, energy consumption and delay.
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