{"title":"6.25 ghz低直流功率低噪声SiGe放大器","authors":"H. Ainspan, M. Soyuer, J. Plouchart, J. Burghartz","doi":"10.1109/CICC.1997.606608","DOIUrl":null,"url":null,"abstract":"A 6.25-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 2.2 dB and an associated gain of 20.4 dB implemented in a standard SiGe bipolar technology is presented. The 50-ohm noise figure is 3.5 dB with S21 of 18.3 dB. The circuit dissipates 9.4 mW from a 2.5-V supply (6.4 mW in the gain stages). The LNA's figure of merit gain/(P/sub DC//spl times/NF) of 0.56 mW/sup -1/ exceeds those of recently published 5 to 6 GHz GaAs MESFET and HBT LNA's.","PeriodicalId":111737,"journal":{"name":"Proceedings of CICC 97 - Custom Integrated Circuits Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"A 6.25-GHz low DC power low-noise amplifier in SiGe\",\"authors\":\"H. Ainspan, M. Soyuer, J. Plouchart, J. Burghartz\",\"doi\":\"10.1109/CICC.1997.606608\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 6.25-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 2.2 dB and an associated gain of 20.4 dB implemented in a standard SiGe bipolar technology is presented. The 50-ohm noise figure is 3.5 dB with S21 of 18.3 dB. The circuit dissipates 9.4 mW from a 2.5-V supply (6.4 mW in the gain stages). The LNA's figure of merit gain/(P/sub DC//spl times/NF) of 0.56 mW/sup -1/ exceeds those of recently published 5 to 6 GHz GaAs MESFET and HBT LNA's.\",\"PeriodicalId\":111737,\"journal\":{\"name\":\"Proceedings of CICC 97 - Custom Integrated Circuits Conference\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of CICC 97 - Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1997.606608\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of CICC 97 - Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1997.606608","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 6.25-GHz low DC power low-noise amplifier in SiGe
A 6.25-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 2.2 dB and an associated gain of 20.4 dB implemented in a standard SiGe bipolar technology is presented. The 50-ohm noise figure is 3.5 dB with S21 of 18.3 dB. The circuit dissipates 9.4 mW from a 2.5-V supply (6.4 mW in the gain stages). The LNA's figure of merit gain/(P/sub DC//spl times/NF) of 0.56 mW/sup -1/ exceeds those of recently published 5 to 6 GHz GaAs MESFET and HBT LNA's.