片上的后期生产调谐I/Q变频器使用可调耦合器终端

C. Grötsch, A. Tessmann, S. Wagner, I. Kallfass
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引用次数: 2

摘要

本文提出了一种基于50 nm ingaas的高电子迁移率晶体管技术的73.5 GHz宽带集成双平衡I/ q上转换器,包括具有电压控制可变终端电阻的兰格耦合器。可变电阻是通过使用阻性场效应管实现的。该MMIC设计用于宽带通信,在输出端具有可控的LO抑制。引入具有压控终端电阻的兰格耦合器提供了一种后期措施,可以优化mmic的I/ q不平衡和LO隔离。与传统的50 Q终端电阻相比,本端隔离可以在20 GHz带宽上提高高达12 dB,同时保持接近恒定的转换增益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On-chip post-production tuning of I/Q frequency converters using adjustable coupler terminations
This paper presents a broadband integrated doublebalanced I/Q-upconverter at 73.5 GHz in a 50 nm InGaAs-based metamorphic high electron mobility transistor technology including Lange couplers with voltage-controlled variable termination resistance. The variable resistance is implemented by using resistive FETs. This MMIC is designed for broadband communication with controllable LO suppression at the output. Introducing Lange couplers with voltage-controlled termination resistance offers a post-production measure to optimize MMICs with respect to I/Q-imbalance and LO isolation. In comparison to conventional 50 Q termination resistances the LO isolation could be improved by up to 12 dB over a bandwidth of 20 GHz while maintaining near constant conversion gain.
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