基于射频磁控溅射沉积MgxZn1-xO(0≤x≤0.36)薄膜的紫外光探测器

2007 Conference on Lasers and Electro-Optics - Pacific Rim Pub Date : 2007-12-04 DOI:10.1109/CLEOPR.2007.4391726

H. Lee, Ming-Yi Wang, Ching-Ting Lee

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引用次数: 0

摘要

采用射频磁控溅射法制备了x值为0 ~ 0.36的MgxZn1-xO薄膜。用x射线衍射和紫外可见光谱对MgxZn1_xO薄膜进行了表征。制备了MgxZn1-xO金属-半导体-金属紫外探测器(msm - upd)。我们还研究了msm - upd的电学和光学性质。

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Ultraviolet Photocodetector Based on MgxZn1-xO(0 ⩽ x ⩽ 0.36) Thin Films Deposited by RF Magnetron Sputtering

The Mg_xZn_1-xO thin films for x varying from 0 to 0.36 were deposited by RF magnetron sputtering. The Mg_xZn_{1_x}O films are characterized by X-ray diffraction and UV-visible spectroscopy. The Mg_xZn_1-xO metal-semiconductor-metal ultraviolet photocodetectors (MSM-UPDs) were fabricated. We also investigated the electrical and optical properties of the MSM-UPDs.

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2007 Conference on Lasers and Electro-Optics - Pacific Rim

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