多谷半导体中热电子输运的位移麦克斯韦分布的局限性

Proceedings of SOUTHEASTCON '94 Pub Date : 1994-04-10 DOI:10.1109/SECON.1994.324354

Lin Huang, M. Cheng, Ying Wen

{"title":"多谷半导体中热电子输运的位移麦克斯韦分布的局限性","authors":"Lin Huang, M. Cheng, Ying Wen","doi":"10.1109/SECON.1994.324354","DOIUrl":null,"url":null,"abstract":"The multi-valley transport model using the displaced Maxwellian distribution (DMD) is applied to study hot-electron transport phenomena in a two-valley semiconductor in fast transient situations. It is shown that the DMD approach at high fields is inadequate. The velocity overshoot behavior given by this approach is less pronounced than the Monte Carlo results. Also, the DMD leads to relatively small mean energy and large average velocity at high fields.<<ETX>>","PeriodicalId":119615,"journal":{"name":"Proceedings of SOUTHEASTCON '94","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Limitations of the displaced Maxwellian distribution for hot-electron transport in multi-valley semiconductors\",\"authors\":\"Lin Huang, M. Cheng, Ying Wen\",\"doi\":\"10.1109/SECON.1994.324354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The multi-valley transport model using the displaced Maxwellian distribution (DMD) is applied to study hot-electron transport phenomena in a two-valley semiconductor in fast transient situations. It is shown that the DMD approach at high fields is inadequate. The velocity overshoot behavior given by this approach is less pronounced than the Monte Carlo results. Also, the DMD leads to relatively small mean energy and large average velocity at high fields.<<ETX>>\",\"PeriodicalId\":119615,\"journal\":{\"name\":\"Proceedings of SOUTHEASTCON '94\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of SOUTHEASTCON '94\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1994.324354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SOUTHEASTCON '94","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1994.324354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

应用位移麦克斯韦分布(DMD)的多谷输运模型研究了快瞬态双谷半导体中的热电子输运现象。结果表明，在高场条件下，DMD方法是不充分的。这种方法给出的速度超调行为比蒙特卡罗结果不那么明显。此外，DMD导致在高场下相对较小的平均能量和较大的平均速度

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Limitations of the displaced Maxwellian distribution for hot-electron transport in multi-valley semiconductors

The multi-valley transport model using the displaced Maxwellian distribution (DMD) is applied to study hot-electron transport phenomena in a two-valley semiconductor in fast transient situations. It is shown that the DMD approach at high fields is inadequate. The velocity overshoot behavior given by this approach is less pronounced than the Monte Carlo results. Also, the DMD leads to relatively small mean energy and large average velocity at high fields.<>

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Proceedings of SOUTHEASTCON '94

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