基于纳米异质结构的近红外宽带半导体光放大器

2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013) Pub Date : 2013-11-07 DOI:10.1109/CAOL.2013.6657551

E. V. Andreeva, S. N. Il'chenko, M. Ladugin, A. A. Lobintsov, A. Marmalyuk, M. V. Shramenko, S. Yakubovich

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引用次数: 1

摘要

研制了用于生产宽带超发光二极管的基于量子阱异质结构的行波半导体光放大器系列。soa模块的小信号光纤增益约为25dB。它们在10 dB水平下具有70-125 nm的光谱增益带。它们一起覆盖750- 1100nm的红外范围。在不含SMF的连续波输出光功率高达50 mW时，证明了它们的高可靠性。最后给出了将所开发的soa模块作为高性能可调谐激光器有源元件的应用实例。

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Broadband semiconductor optical amplifiers of NIR range based on nanoheterostructures

The series of travelling-wave semiconductor optical amplifiers (SOAs) based on QW-heterostructures used for the production of broadband superluminescent diodes (SLDs) is developed. Small-signal fiber-to-fiber gain of SOA-modules is about 25dB. They possess spectral gain bands of 70-125 nm at 10 dB level. Together they cover the IR-range of 750-1100 nm. Their high reliability at CW output optical power of up to 50 mW ex SMF was demonstrated. An example of the application of one of the developed SOA-modules as an active element of high-performance tunable laser is presented.

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2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013)

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